Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
1 Online-Ressource.
- Sprache
-
Englisch
- Erschienen in
-
Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer ; volume:15 ; number:1 ; day:15 ; month:2 ; year:2024 ; pages:1-8 ; date:12.2024
Nature Communications ; 15, Heft 1 (15.2.2024), 1-8, 12.2024
- Urheber
-
Yang, Dongyang
Liang, Jing
Wu, Jingda
Xiao, Yunhuan
Dadap, Jerry I.
Watanabe, Kenji
Taniguchi, Takashi
Ye, Ziliang
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s41467-024-45709-x
- URN
-
urn:nbn:de:101:1-2404230810183.302395582744
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 11:01 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Yang, Dongyang
- Liang, Jing
- Wu, Jingda
- Xiao, Yunhuan
- Dadap, Jerry I.
- Watanabe, Kenji
- Taniguchi, Takashi
- Ye, Ziliang
- SpringerLink (Online service)
Ähnliche Objekte (12)
MoS2 photodetectors integrated with photonic circuits
Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
Topological valley transport at the curved boundary of a folded bilayer graphene
Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene
Supercurrent mediated by helical edge modes in bilayer graphene
Excitonic signatures of ferroelectric order in parallel-stacked MoS2
Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene
Non-identical moiré twins in bilayer graphene
Evidence of compensated semimetal with electronic correlations at charge neutrality of twisted double bilayer graphene
Coherent charge oscillations in a bilayer graphene double quantum dot
MoS2 photodetectors integrated with photonic circuits
Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
Topological valley transport at the curved boundary of a folded bilayer graphene
Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene
Supercurrent mediated by helical edge modes in bilayer graphene
Excitonic signatures of ferroelectric order in parallel-stacked MoS2
Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene
Non-identical moiré twins in bilayer graphene
Evidence of compensated semimetal with electronic correlations at charge neutrality of twisted double bilayer graphene
Coherent charge oscillations in a bilayer graphene double quantum dot
MoS2 photodetectors integrated with photonic circuits
Temperature induced modulation of resonant Raman scattering in bilayer 2H-MoS2
Orbitally Controlled Quantum Hall States in Decoupled Two‐Bilayer Graphene Sheets
Topological valley transport at the curved boundary of a folded bilayer graphene
Ultrasteep Slope Cryogenic FETs Based on Bilayer Graphene
Supercurrent mediated by helical edge modes in bilayer graphene
Excitonic signatures of ferroelectric order in parallel-stacked MoS2
Interplay of valley, layer and band topology towards interacting quantum phases in moiré bilayer graphene
Spontaneous time-reversal symmetry breaking in twisted double bilayer graphene
Non-identical moiré twins in bilayer graphene
Evidence of compensated semimetal with electronic correlations at charge neutrality of twisted double bilayer graphene