Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
-
Englisch
- Erschienen in
-
Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 ; volume:15 ; number:1 ; day:30 ; month:12 ; year:2024 ; pages:1-10 ; date:12.2024
Nature Communications ; 15, Heft 1 (30.12.2024), 1-10, 12.2024
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
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Li, Xiuzhen
Qin, Biao
Wang, Yaxian
Xi, Yue
Huang, Zhiheng
Zhao, Mengze
Peng, Yalin
Chen, Zitao
Pan, Zitian
Zhu, Jundong
Cui, Chenyang
Yang, Rong
Yang, Wei
Meng, Sheng
Shi, Dongxia
Bai, Xuedong
Liu, Can
Li, Na
Tang, Jianshi
Liu, Kaihui
Du, Luojun
Zhang, Guangyu
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s41467-024-55333-4
- URN
-
urn:nbn:de:101:1-2503072120099.526153678548
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:38 MESZ
Datenpartner
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Beteiligte
- Li, Xiuzhen
- Qin, Biao
- Wang, Yaxian
- Xi, Yue
- Huang, Zhiheng
- Zhao, Mengze
- Peng, Yalin
- Chen, Zitao
- Pan, Zitian
- Zhu, Jundong
- Cui, Chenyang
- Yang, Rong
- Yang, Wei
- Meng, Sheng
- Shi, Dongxia
- Bai, Xuedong
- Liu, Can
- Li, Na
- Tang, Jianshi
- Liu, Kaihui
- Du, Luojun
- Zhang, Guangyu
- SpringerLink (Online service)
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Improved voltage gain in mechanically stacked bilayer graphene field effect transistors
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Photo-sensitivity of large area physical vapor deposited mono and bilayer MoS2
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Super-swelling behavior of stacked lipid bilayer systems
Excitonic signatures of ferroelectric order in parallel-stacked MoS2
Highly nonlinear dipolar exciton-polaritons in bilayer MoS2
High Voltage Gain Inverters From Artificially Stacked Bilayer CVD Graphene FETs
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