Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
1 Online-Ressource.
Language
Englisch

Bibliographic citation
Sliding ferroelectric memories and synapses based on rhombohedral-stacked bilayer MoS2 ; volume:15 ; number:1 ; day:30 ; month:12 ; year:2024 ; pages:1-10 ; date:12.2024
Nature Communications ; 15, Heft 1 (30.12.2024), 1-10, 12.2024

Classification
Elektrotechnik, Elektronik

Creator
Li, Xiuzhen
Qin, Biao
Wang, Yaxian
Xi, Yue
Huang, Zhiheng
Zhao, Mengze
Peng, Yalin
Chen, Zitao
Pan, Zitian
Zhu, Jundong
Cui, Chenyang
Yang, Rong
Yang, Wei
Meng, Sheng
Shi, Dongxia
Bai, Xuedong
Liu, Can
Li, Na
Tang, Jianshi
Liu, Kaihui
Du, Luojun
Zhang, Guangyu
Contributor
SpringerLink (Online service)

DOI
10.1038/s41467-024-55333-4
URN
urn:nbn:de:101:1-2503072120099.526153678548
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:38 AM CEST

Data provider

This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.

Associated

  • Li, Xiuzhen
  • Qin, Biao
  • Wang, Yaxian
  • Xi, Yue
  • Huang, Zhiheng
  • Zhao, Mengze
  • Peng, Yalin
  • Chen, Zitao
  • Pan, Zitian
  • Zhu, Jundong
  • Cui, Chenyang
  • Yang, Rong
  • Yang, Wei
  • Meng, Sheng
  • Shi, Dongxia
  • Bai, Xuedong
  • Liu, Can
  • Li, Na
  • Tang, Jianshi
  • Liu, Kaihui
  • Du, Luojun
  • Zhang, Guangyu
  • SpringerLink (Online service)

Other Objects (12)