Hochschulschrift
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783958062740
- Maße
-
24 cm
- Umfang
-
X, 172 Seiten
- Sprache
-
Englisch
- Anmerkungen
-
Illustrationen
RWTH Aachen University, Dissertation, 2017
- Erschienen in
-
Schriften des Forschungszentrums Jülich / Reihe Information / Forschungszentrum Jülich ; volume 52, [...]
- Klassifikation
-
Elektrotechnik, Elektronik
- Ereignis
-
Veröffentlichung
- (wo)
-
Jülich
- (wer)
-
Forschungszentrum Jülich GmbH, Zentralbibliothek
- (wann)
-
[2017]
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:41 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Objekttyp
- Hochschulschrift
Beteiligte
- Aslam, Nabeel
- Forschungszentrum Jülich GmbH, Zentralbibliothek
Entstanden
- [2017]
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