Hochschulschrift
Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783893369706
- ISSN
-
1866-1777
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Aachen, Techn. Hochsch., Diss., 2014
- Bibliographic citation
-
Schriften des Forschungszentrums Jülich / Reihe Information ; 36
- Classification
-
Physik
- Keyword
-
Atomlagenabscheidung , Titandioxid , Integration
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen
- (when)
-
2014
- Creator
- URN
-
urn:nbn:de:hbz:82-opus-51131
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:58 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Reiners, Marcel
- Hochschulbibliothek der Rheinisch-Westfälischen Technischen Hochschule Aachen
Time of origin
- 2014
Other Objects (12)
Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
Resistive switching in TiO2 thin films
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
Resistive switching of chemically synthesized TiO2 nanoparticles
Engineering of HfO2-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Stateful characterization of resistive switching TiO2 with electron beam induced currents
High frequency resistive switching behavior of amorphous TiO2 and NiO
Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
Publisher Correction: Stateful characterization of resistive switching TiO2 with electron beam induced currents
Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
Resistive switching in TiO2 thin films
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
Resistive switching of chemically synthesized TiO2 nanoparticles
Engineering of HfO2-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Stateful characterization of resistive switching TiO2 with electron beam induced currents
High frequency resistive switching behavior of amorphous TiO2 and NiO
Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride
Publisher Correction: Stateful characterization of resistive switching TiO2 with electron beam induced currents
Integration and characterization of atomic layer deposited TiO2 thin films for resistive switching applications
Resistive switching in TiO2 thin films
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
Resistive switching of chemically synthesized TiO2 nanoparticles
Engineering of HfO2-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers
Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications
Stateful characterization of resistive switching TiO2 with electron beam induced currents
High frequency resistive switching behavior of amorphous TiO2 and NiO
Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects
Resistive Switching in Memristors Based on Artificially Stacked Chemical-Vapor-Deposited Hexagonal-Boron Nitride