Monografie
Engineering of $HfO_2}$-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers
- Sprache
-
Englisch
- Identifier
-
1279396601
Thema
Resistives Schalten; Schichtdicke; Stoffeigenschaft; Elektrode; Widerstand; Oxidschicht; Dünne Schicht
Beteiligte Personen und Organisationen
- DOI
-
10.18154/RWTH-2022-10911
- URN
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
02.05.2023, 09:12 MESZ
Objekttyp
- Monografie
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