Engineering of HfO2-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers
- Alternative title
-
Konstruktion vonHfO2-basierten graduellen resistiv schaltenden Bauelementen erhalten durch Atomlagenabscheidung von oxidischen Doppelschichten
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Rheinisch-Westfälische Technische Hochschule Aachen, Dissertation, 2022
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
Resistives Schalten
Schichtdicke
Stoffeigenschaft
Elektrode
Widerstand
Oxidschicht
Dünne Schicht
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Universitätsbibliothek der RWTH Aachen
- (when)
-
2022
- Creator
- Contributor
- DOI
-
10.18154/RWTH-2022-10911
- URN
-
urn:nbn:de:101:1-2023012800330050863615
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:50 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Hardtdegen, Alexander
- Waser, Rainer
- Heuken, Michael
- Universitätsbibliothek der RWTH Aachen
Time of origin
- 2022
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