- Alternative title
-
Kognitive Anwendungen in resistiven Speichern
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Norderstedt : BoD - Books on Demand, 2020
Rheinisch-Westfälische Technische Hochschule Aachen, Dissertation, 2019
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
Nichtflüchtiger Speicher
Resistives Schalten
CMOS
RAM
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Universitätsbibliothek der RWTH Aachen
- (when)
-
2020
- Creator
- Contributor
- DOI
-
10.18154/RWTH-2020-08096
- URN
-
urn:nbn:de:101:1-2023031409472624045553
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
- 14.08.2025, 10:53 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Nielen, Lutz
- Waser, Rainer
- Gemmeke, Tobias
- Universitätsbibliothek der RWTH Aachen
Time of origin
- 2020
Other Objects (12)
The role of materials design in oxide-based resistive memories
Studien zur Bildung und Beweglichkeit von Oberflächenkomplexen an der Silber/Elektrolyt-Grenzfläche
Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications
Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Germanium sulphide based resistive switching devices
Integration of redox based resistive switching memory devices
Defect interactions and diffusion in resistive switching oxides
Modeling and simulation of valence-change based resistive switching
A numerical simulation model of valence-change-based resistive switching
Nanoelectronics and information technology : advanced electronic materials and novel devices
Nanotechnology, Vol. 3.. Information technology. - 1 / ed. by Rainer Waser
The role of materials design in oxide-based resistive memories
Studien zur Bildung und Beweglichkeit von Oberflächenkomplexen an der Silber/Elektrolyt-Grenzfläche
Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications
Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Germanium sulphide based resistive switching devices
Integration of redox based resistive switching memory devices
Defect interactions and diffusion in resistive switching oxides
Modeling and simulation of valence-change based resistive switching
A numerical simulation model of valence-change-based resistive switching
Nanoelectronics and information technology : advanced electronic materials and novel devices
Nanotechnology, Vol. 3.. Information technology. - 1 / ed. by Rainer Waser
The role of materials design in oxide-based resistive memories
Studien zur Bildung und Beweglichkeit von Oberflächenkomplexen an der Silber/Elektrolyt-Grenzfläche
Resistive switching : from fundamentals of nanoionic redox processes to memristive device applications
Chemically-inactive interfaces in thin film Ag/AgI systems for resistive switching memories
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Germanium sulphide based resistive switching devices
Integration of redox based resistive switching memory devices
Defect interactions and diffusion in resistive switching oxides
Modeling and simulation of valence-change based resistive switching
A numerical simulation model of valence-change-based resistive switching
Nanoelectronics and information technology : advanced electronic materials and novel devices