- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
Rheinisch-Westfälische Technische Hochschule Aachen, Dissertation, 2019
- Keyword
-
Diffusion
Oxides
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
Universitätsbibliothek der RWTH Aachen
- (when)
-
2019
- Creator
- Contributor
- DOI
-
10.18154/RWTH-2020-10553
- URN
-
urn:nbn:de:101:1-2021012006373647291800
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:43 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Schie, Marcel
- Waser, Rainer
- De Souza, Roger A.
- Universitätsbibliothek der RWTH Aachen
Time of origin
- 2019
Other Objects (12)
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Integration of redox based resistive switching memory devices
Engineering of HfO2-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers
Modeling and simulation of valence-change based resistive switching
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Physics-based compact modeling of valence-change-based resistive switching devices
Resistive switching in Pr$_1−x}$Ca$_{x}$MnO$_{3}$/YSZ conclusive model and switching kinetics
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Studien zur Bildung und Beweglichkeit von Oberflächenkomplexen an der Silber/Elektrolyt-Grenzfläche
Redox processes and ionic transport in resistive switching binary metal oxides
Germanium sulphide based resistive switching devices
Non-standard switching phenomena and interface effects in resistive switching devices
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Integration of redox based resistive switching memory devices
Engineering of HfO2-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers
Modeling and simulation of valence-change based resistive switching
A numerical simulation model of valence-change-based resistive switching
Physics-based compact modeling of valence-change-based resistive switching devices
Resistive switching in Pr$_1−x}$Ca$_{x}$MnO$_{3}$/YSZ conclusive model and switching kinetics
The role of materials design in oxide-based resistive memories
Studien zur Bildung und Beweglichkeit von Oberflächenkomplexen an der Silber/Elektrolyt-Grenzfläche
Redox processes and ionic transport in resistive switching binary metal oxides
Germanium sulphide based resistive switching devices
Non-standard switching phenomena and interface effects in resistive switching devices
Critical Analysis of Thermodiffusion‐Induced Unipolar Resistive Switching in a Metal‐Oxide‐Metal Memristive Device
Integration of redox based resistive switching memory devices
Engineering of HfO2-based gradual resistive switching devices obtained from atomic layer deposited oxide bilayers
Modeling and simulation of valence-change based resistive switching
A numerical simulation model of valence-change-based resistive switching
Physics-based compact modeling of valence-change-based resistive switching devices
Resistive switching in Pr$_1−x}$Ca$_{x}$MnO$_{3}$/YSZ conclusive model and switching kinetics
The role of materials design in oxide-based resistive memories