Hochschulschrift
Resistive switching phenomena in stacks of binary transition metal oxides grown by atomic layer deposition
- Weitere Titel
-
Resistive switching in ALD metal oxide stacks
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783958063990
- Maße
-
25 cm
- Umfang
-
ix, 196 Seiten
- Sprache
-
Englisch
- Anmerkungen
-
Illustrationen
RWTH Aachen University, Dissertation, 2019
- Erschienen in
-
Schriften des Forschungszentrums Jülich / Reihe Information / Forschungszentrum Jülich ; Band 57, [...]
- Klassifikation
-
Elektrotechnik, Elektronik
- Schlagwort
-
Resistives Schalten
RAM
Metalloxide
Oxidschicht
Doppelschicht
Stapel
Atomlagenabscheidung
Aluminiumoxide
Titandioxid
Nanostruktur
- Ereignis
-
Veröffentlichung
- (wo)
-
Jülich
- (wer)
-
Forschungszentrum Jülich GmbH, Zentralbibliothek Verlag
- (wann)
-
[2019]
- Urheber
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.03.2025, 12:05 MEZ
Datenpartner
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Objekttyp
- Hochschulschrift
Beteiligte
- Zhang, Hehe
- Forschungszentrum Jülich GmbH, Zentralbibliothek Verlag
Entstanden
- [2019]
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