Hochschulschrift
Resistive switching phenomena in stacks of binary transition metal oxides grown by atomic layer deposition
- Alternative title
-
Resistive switching in ALD metal oxide stacks
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783958063990
- Dimensions
-
25 cm
- Extent
-
ix, 196 Seiten
- Language
-
Englisch
- Notes
-
Illustrationen
RWTH Aachen University, Dissertation, 2019
- Bibliographic citation
-
Schriften des Forschungszentrums Jülich / Reihe Information / Forschungszentrum Jülich ; Band 57, [...]
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
Resistives Schalten
RAM
Metalloxide
Oxidschicht
Doppelschicht
Stapel
Atomlagenabscheidung
Aluminiumoxide
Titandioxid
Nanostruktur
- Event
-
Veröffentlichung
- (where)
-
Jülich
- (who)
-
Forschungszentrum Jülich GmbH, Zentralbibliothek Verlag
- (when)
-
[2019]
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.03.2025, 12:05 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Zhang, Hehe
- Forschungszentrum Jülich GmbH, Zentralbibliothek Verlag
Time of origin
- [2019]
Other Objects (12)
Resistive switching phenomena in stacks of binary transition metal oxides grown by atomic layer deposition
Redox processes and ionic transport in resistive switching binary metal oxides
Redox processes and ionic transport in resistive switching binary metal oxides
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Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
Germanium sulphide based resistive switching devices
Interaction between redox-based resistive switching mechanisms
Resistive Switching Acceleration Induced by Thermal Confinement
Modeling and simulation of resistive switching devices
Resistive switching in Cu: TCNQ thin films
Resistive switching in TiO2 thin films
Resistive switching in Cu:TCNQ thin films
Resistive switching phenomena in stacks of binary transition metal oxides grown by atomic layer deposition
Redox processes and ionic transport in resistive switching binary metal oxides
Redox processes and ionic transport in resistive switching binary metal oxides
Filament Dynamics in Resistive Switching
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
Germanium sulphide based resistive switching devices
Interaction between redox-based resistive switching mechanisms
Resistive Switching Acceleration Induced by Thermal Confinement
Modeling and simulation of resistive switching devices
Resistive switching in Cu: TCNQ thin films
Resistive switching in TiO2 thin films
Resistive switching in Cu:TCNQ thin films
Resistive switching phenomena in stacks of binary transition metal oxides grown by atomic layer deposition
Redox processes and ionic transport in resistive switching binary metal oxides
Redox processes and ionic transport in resistive switching binary metal oxides
Filament Dynamics in Resistive Switching
Resistive switching memory devices from atomic layer deposited binary and ternary oxide thin films
Germanium sulphide based resistive switching devices
Interaction between redox-based resistive switching mechanisms
Resistive Switching Acceleration Induced by Thermal Confinement
Modeling and simulation of resistive switching devices
Resistive switching in Cu: TCNQ thin films
Resistive switching in TiO2 thin films