High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
-
online resource.
- Bibliographic citation
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High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer ; volume:14 ; number:1 ; day:4 ; month:6 ; year:2019 ; pages:1-6 ; date:12.2019
Nanoscale research letters ; 14, Heft 1 (4.6.2019), 1-6, 12.2019
- Classification
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Elektrotechnik, Elektronik
- Creator
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Yang, Chao
Luo, Xiaorong
Sun, Tao
Zhang, Anbang
Ouyang, Dongfa
Deng, Siyu
Wei, Jie
Zhang, Bo
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-019-3025-8
- URN
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urn:nbn:de:101:1-2019092404404698536088
- Rights
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:38 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Yang, Chao
- Luo, Xiaorong
- Sun, Tao
- Zhang, Anbang
- Ouyang, Dongfa
- Deng, Siyu
- Wei, Jie
- Zhang, Bo
- SpringerLink (Online service)
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