CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency

Abstract: Even though the recent progress made in complementary metal–oxide–semiconductor (CMOS) image sensors (CIS) has enabled numerous applications affecting our daily lives, the technology still relies on conventional methods such as antireflective coatings and ion‐implanted back‐surface field to reduce optical and electrical losses resulting in limited device performance. In this work, these methods are replaced with nanostructured surfaces and atomic layer deposited surface passivation. The results show that such surface nanoengineering applied to a commercial backside illuminated CIS significantly extends its spectral range and enhances its photosensitivity as demonstrated by >90% quantum efficiency in the 300–700 nm wavelength range. The surface nanoengineering also reduces the dark current by a factor of three. While the photoresponse uniformity of the sensor is seen to be slightly better, possible scattering from the nanostructures can lead to increased optical crosstalk between the pixels. The results demonstrate the vast potential of surface nanoengineering in improving the performance of CIS for a wide range of applications.

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Bibliographic citation
CMOS Image Sensor for Broad Spectral Range with >90% Quantum Efficiency ; day:26 ; month:07 ; year:2023 ; extent:8
Small ; (26.07.2023) (gesamt 8)

Creator
Setälä, Olli E.
Prest, Martin J.
Stefanov, Konstantin D.
Jordan, Douglas
Soman, Matthew R.
Vähänissi, Ville
Savin, Hele

DOI
10.1002/smll.202304001
URN
urn:nbn:de:101:1-2023072715062007312090
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
14.08.2025, 10:49 AM CEST

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Associated

  • Setälä, Olli E.
  • Prest, Martin J.
  • Stefanov, Konstantin D.
  • Jordan, Douglas
  • Soman, Matthew R.
  • Vähänissi, Ville
  • Savin, Hele

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