Stitched passive CMOS strip sensors

Abstract: As a result of a CERN market survey, CMOS sensors in pixel and strip geometries were developed. The CMOS process is an established commercial industry process, which a lot of foundries utilize to produce silicon type devices. Typical CMOS foundries are equipped for bulk productions, but only for sensors much smaller than what is needed in e.g. the strip region of the ATLAS Inner Tracker. To produce large enough sensors, the process of stitching is utilized. The sensor structure is divided up into different regions, which individual wafer masks can imprint side by side onto the wafer to form a coherent area. With this method, the sensors can be nearly wafer-sized. The effects of stitching on charge collection, electric field strength and configuration, detection efficiency and radiation hardness have to be investigated.

The sensors discussed in this talk are stitched passive CMOS strip sensors produced by LFoundry in a 150 nm process with three different strip designs. The results of electrical IV characterisations, TCT and 90Sr-source measurements and the effects of radiation damages are discussed. The effects of the stitches on the sensors performance were also investigated.

The results of these measurements demonstrate that the stitching process works and introduces no negative effects on the sensors performance, before and after irradiation

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch

Event
Veröffentlichung
(where)
Freiburg
(who)
Universität
(when)
2023
Creator
Contributor
Experimentelle Teilchenphysik, Abt. Prof. Karl Jakobs
Albert-Ludwigs-Universität Freiburg. Physikalisches Institut

DOI
10.6094/UNIFR/232016
URN
urn:nbn:de:bsz:25-freidok-2320165
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
25.03.2025, 1:44 PM CET

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Associated

Time of origin

  • 2023

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