Status of the CMOS strip detector project in Freiburg

Abstract: Due to the increased use of large area silicon detectors in current and future particle detectors and only very few vendors available, which are capable of silicon production and processing fulfilling quality and size requirements, the need for reliable, fast and cost efficient production processes arises. As part of a CERN market survey, CMOS sensors in pixel and strip geometries were developed.

The idea is to utilise the already existing industry infrastructure of the CMOS process. However, typical CMOS foundries are usually only equipped to process smaller sensors compared to what is required in e.g. the strip region of the ATLAS Inner Tracker. Therefore, the process of stitching has to be used. By employing wafer masks where the sensor structure is divided up into different parts, the individual parts can be imprinted multiple times side by side on the wafer resulting in coherent areas larger than the reticles themselves. The effect of stitching on charge collection, electric field strength and configuration, detection efficiency and radiation hardness has to be investigated.

In this talk measurements on passive CMOS strip sensors, produced by LFoundry in a 150 nm process, will be discussed. Three different strip designs are investigated and the results of IV, 90Sr-source and edge-TCT measurements will be presented

Objekt anzeigen

• Standort: Deutsche Nationalbibliothek Frankfurt am Main
• Umfang: Online-Ressource
• Sprache: Englisch

Beteiligte, Orts- und Zeitangaben

• Ereignis: Veröffentlichung
• (wo): Freiburg
• (wer): Universität
• (wann): 2023
• Urheber: Sorgenfrei, Niels
• Beteiligte Personen und Organisationen: Experimentelle Teilchenphysik, Abt. Prof. Karl Jakobs ; Albert-Ludwigs-Universität Freiburg. Physikalisches Institut

Weitere Informationen

• DOI: 10.6094/UNIFR/232018
• URN: urn:nbn:de:bsz:25-freidok-2320186
• Rechteinformation: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.