Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: 1 Online-Ressource.

Language: Englisch

Bibliographic citation: Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure ; volume:14 ; number:1 ; day:18 ; month:3 ; year:2024 ; pages:1-8 ; date:12.2024
Scientific reports ; 14, Heft 1 (18.3.2024), 1-8, 12.2024

Classification: Elektrotechnik, Elektronik

Creator: Han, Jongseong
Son, Jaemin
Ryu, Seungho
Cho, Kyoungah
Kim, Sangsig

Contributor: SpringerLink (Online service)

DOI: 10.1038/s41598-024-57290-w

URN: urn:nbn:de:101:1-2405210841503.507851097147

Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 14.08.2025, 10:58 AM CEST

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Han, Jongseong
Son, Jaemin
Ryu, Seungho
Cho, Kyoungah
Kim, Sangsig
SpringerLink (Online service)

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Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure

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Other Objects (12)

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