New ternary inverter with memory function using silicon feedback field-effect transistors

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Standort: Deutsche Nationalbibliothek Frankfurt am Main

ISSN: 2045-2322

Umfang: Online-Ressource

Sprache: Englisch

Anmerkungen: online resource.

Erschienen in: New ternary inverter with memory function using silicon feedback field-effect transistors ; volume:12 ; number:1 ; day:28 ; month:7 ; year:2022 ; pages:1-8 ; date:12.2022
Scientific reports ; 12, Heft 1 (28.7.2022), 1-8, 12.2022

Klassifikation: Elektrotechnik, Elektronik

Urheber: Son, Jaemin
Cho, Kyoungah
Kim, Sangsig

Beteiligte Personen und Organisationen: SpringerLink (Online service)

DOI: 10.1038/s41598-022-17035-z

URN: urn:nbn:de:101:1-2022102310545459854247

Rechteinformation: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.

Letzte Aktualisierung: 15.08.2025, 07:36 MESZ

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Son, Jaemin
Cho, Kyoungah
Kim, Sangsig
SpringerLink (Online service)

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New ternary inverter with memory function using silicon feedback field-effect transistors

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