Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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1 Online-Ressource.
- Sprache
-
Englisch
- Erschienen in
-
Binary and ternary logic-in-memory using nanosheet feedback field-effect transistors with triple-gated structure ; volume:14 ; number:1 ; day:18 ; month:3 ; year:2024 ; pages:1-8 ; date:12.2024
Scientific reports ; 14, Heft 1 (18.3.2024), 1-8, 12.2024
- Klassifikation
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Elektrotechnik, Elektronik
- Urheber
-
Han, Jongseong
Son, Jaemin
Ryu, Seungho
Cho, Kyoungah
Kim, Sangsig
- Beteiligte Personen und Organisationen
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SpringerLink (Online service)
- DOI
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10.1038/s41598-024-57290-w
- URN
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urn:nbn:de:101:1-2405210841503.507851097147
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:58 MESZ
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Beteiligte
- Han, Jongseong
- Son, Jaemin
- Ryu, Seungho
- Cho, Kyoungah
- Kim, Sangsig
- SpringerLink (Online service)
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