Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Bidirectional Synaptic Operations of Triple‐Gated Silicon Nanosheet Transistors with Reconfigurable Memory Characteristics ; day:11 ; month:03 ; year:2024 ; extent:7
Advanced electronic materials ; (11.03.2024) (gesamt 7)
- Urheber
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Shin, Yunwoo
Son, Jaemin
Jeon, Juhee
Ryu, Seungho
Cho, Kyoungah
Kim, Sangsig
- DOI
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10.1002/aelm.202300764
- URN
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urn:nbn:de:101:1-2024031213153979002558
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 11:00 MESZ
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Beteiligte
- Shin, Yunwoo
- Son, Jaemin
- Jeon, Juhee
- Ryu, Seungho
- Cho, Kyoungah
- Kim, Sangsig
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