Hochschulschrift
Untersuchung von"high-k" Materialien als alternative Dielektrika für AlGaN/GaN-basierte Metall-Isolator-Halbleiter-Heterostruktur-Feldeffekt-Transistoren (MISHFET) : = Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)
- Weitere Titel
-
Investigation of "high-k" materials as alternative dielectrics for AlGaN/GaN-based metal-insulator-semiconductor heterostructure field effect transistors (MISHFET)
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Anmerkungen
-
Text in engl. Sprache
Aachen, Techn. Hochsch., Diss., 2009
- Klassifikation
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Elektrotechnik, Elektronik
- Schlagwort
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Galliumnitrid ; High-k-Dielektrikum ; HEMT ; MOS ; Halbleiter ; Festkörperphysik ; Siliciumdioxid
- Urheber
- URN
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urn:nbn:de:hbz:82-opus-28929
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:47 MEZ
Datenpartner
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Objekttyp
- Hochschulschrift
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