Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
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1556-276X
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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online resource.
- Bibliographic citation
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Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory ; volume:15 ; number:1 ; day:22 ; month:6 ; year:2020 ; pages:1-6 ; date:12.2020
Nanoscale research letters ; 15, Heft 1 (22.6.2020), 1-6, 12.2020
- Creator
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Peng, Yue
Han, Genquan
Liu, Fenning
Xiao, Wenwu
Liu, Yan
Zhong, Ni
Duan, Chungang
Feng, Ze
Dong, Hong
Hao, Yue
- Contributor
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SpringerLink (Online service)
- DOI
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10.1186/s11671-020-03364-3
- URN
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urn:nbn:de:101:1-2020081821351383610759
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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14.08.2025, 11:00 AM CEST
Data provider
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Peng, Yue
- Han, Genquan
- Liu, Fenning
- Xiao, Wenwu
- Liu, Yan
- Zhong, Ni
- Duan, Chungang
- Feng, Ze
- Dong, Hong
- Hao, Yue
- SpringerLink (Online service)
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