- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
1 Online-Ressource.
- Sprache
-
Englisch
- Erschienen in
-
Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide ; volume:15 ; number:1 ; day:9 ; month:5 ; year:2024 ; pages:1-8 ; date:12.2024
Nature Communications ; 15, Heft 1 (9.5.2024), 1-8, 12.2024
- Urheber
-
Taki, Kazuma
Sekine, Naoki
Watanabe, Kouhei
Miyatake, Yuto
Akazawa, Tomohiro
Sakumoto, Hiroya
Toprasertpong, Kasidit
Takagi, Shinichi
Takenaka, Mitsuru
- Beteiligte Personen und Organisationen
-
SpringerLink (Online service)
- DOI
-
10.1038/s41467-024-47893-2
- URN
-
urn:nbn:de:101:1-2407092122568.673310906700
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
14.08.2025, 10:54 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Beteiligte
- Taki, Kazuma
- Sekine, Naoki
- Watanabe, Kouhei
- Miyatake, Yuto
- Akazawa, Tomohiro
- Sakumoto, Hiroya
- Toprasertpong, Kasidit
- Takagi, Shinichi
- Takenaka, Mitsuru
- SpringerLink (Online service)
Ähnliche Objekte (12)
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films
Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films
Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films
Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films
Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories
Novel Fluorite Structure Ferroelectric and Antiferroelectric Hafnium Oxide-based Nonvolatile Memories
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Material development of doped hafnium oxide for non-volatile ferroelectric memory application
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films
Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films
Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films