Hochschulschrift
Scaling of the ferroelectric field effect transistor and programming concepts for non-volatile memory applications
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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30 cm
- Extent
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VII, 121 S.
- Language
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Englisch
- Notes
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graph. Darst.
Aachen, Techn. Hochsch., Diss., 2005 (Nicht für den Austausch)
- Classification
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Ingenieurwissenschaften und Maschinenbau
- Keyword
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Ferroelektrischer Transistor
MOS-FET
Speicherkarte
Schaltungsentwurf
FRAM
Programmierung
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
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11.06.2025, 2:23 PM CEST
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
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Material development of doped hafnium oxide for non-volatile ferroelectric memory application
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Reconfigurable Si Nanowire Nonvolatile Transistors
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