Scanning Transmission Electron Microscopy Analysis of the Si (111)–AlN–GaN Nanowire Interface Grown by Polarity‐ and Site‐Controlled Growth Method
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Scanning Transmission Electron Microscopy Analysis of the Si (111)–AlN–GaN Nanowire Interface Grown by Polarity‐ and Site‐Controlled Growth Method ; day:12 ; month:11 ; year:2024 ; extent:8
Physica status solidi / A. A, Applications and materials science ; (12.11.2024) (gesamt 8)
- Urheber
- DOI
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10.1002/pssa.202400562
- URN
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urn:nbn:de:101:1-2411131334137.066747893830
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:35 MESZ
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Beteiligte
- Häuser, Patrick
- Heidelmann, Markus
- Prost, Werner
- Bartsch, Mathias
- Lorke, Axel
- Weimann, Nils
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