Nils Weimann
Elektroingenieur
Hat mitgewirkt an:
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Scanning Transmission Electron Microscopy Analysis of the Si (111)–AlN–GaN Nanowire Interface Grown by Polarity‐ and Site‐Controlled Growth Method
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Tunneling‐Related Leakage Currents in Coaxial GaAs/InGaP Nanowire Heterojunction Bipolar Transistors
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Design of a 1-to-4 Subarray Element for Wireless Subharmonie Injection in the THz Band
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THz Detectors and Emitters with On-Chip Antenna aligned on Hyper-Hemispherical Silicon Lenses