Hochschulschrift
Through silicon via field-effect transistor with Hafnia-based ferroelectrics and the doping of silicon by gallium implantation utilizing a focused ion beam system
- Standort
-
Deutsche Nationalbibliothek Frankfurt am Main
- Maße
-
21 cm
- Umfang
-
XLIV, 122 Seiten
- Sprache
-
Englisch
- Anmerkungen
-
Illustrationen
Technische Universität Dresden, Dissertation, 2020
- Klassifikation
-
Elektrotechnik, Elektronik
- Inhaltsverzeichnis
- Rechteinformation
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Letzte Aktualisierung
-
11.06.2025, 13:34 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Objekttyp
- Hochschulschrift
Beteiligte
Entstanden
- [2020]
Ähnliche Objekte (12)
Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System
Graphene‐on‐Silicon Hybrid Field‐Effect Transistors
Graphene‐on‐Silicon Hybrid Field‐Effect Transistors
Modeling, fabrication and characterization of silicon tunnel field-effect transistors
Modeling, fabrication and characterization of silicon tunnel field-effect transistors
Silicon carbide field-effect transistor (FET) transducers for harsh environment applications
Reconfigurable field-effect transistors based on wet-chemically etched silicon nanostructures
Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon
Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology
Focused Ion Beam Sputtering of Silicon and Related Materials
Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers
Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System
Graphene‐on‐Silicon Hybrid Field‐Effect Transistors
Graphene‐on‐Silicon Hybrid Field‐Effect Transistors
Modeling, fabrication and characterization of silicon tunnel field-effect transistors
Modeling, fabrication and characterization of silicon tunnel field-effect transistors
Silicon carbide field-effect transistor (FET) transducers for harsh environment applications
Reconfigurable field-effect transistors based on wet-chemically etched silicon nanostructures
Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon
Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology
Focused Ion Beam Sputtering of Silicon and Related Materials
Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate
Stability of industrial gallium-doped Czochralski silicon PERC cells and wafers
Through Silicon Via Field-Effect Transistor with Hafnia-based Ferroelectrics and the Doping of Silicon by Gallium Implantation Utilizing a Focused Ion Beam System
Graphene‐on‐Silicon Hybrid Field‐Effect Transistors
Graphene‐on‐Silicon Hybrid Field‐Effect Transistors
Modeling, fabrication and characterization of silicon tunnel field-effect transistors
Modeling, fabrication and characterization of silicon tunnel field-effect transistors
Silicon carbide field-effect transistor (FET) transducers for harsh environment applications
Reconfigurable field-effect transistors based on wet-chemically etched silicon nanostructures
Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon
Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology
Focused Ion Beam Sputtering of Silicon and Related Materials
Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate