Influence of co-reactants on surface passivation by nanoscale hafnium oxide layers grown by atomic layer deposition on silicon

Abstract: Hafnium oxide thin films have attracted considerable interest for passivation layers, protective barriers, and anti-reflection coatings. Atomic layer deposition offers a route to produce conformal films at the nanometre scale, but there is a lack of clarity over how the growth conditions affect the film properties. Here we present a study into the role of different atomic layer deposition co-reactants (O2 plasma, O3 and H2O) in the growth of HfOx on n-type silicon from a tetrakis(dimethylamido)hafnium (TDMAH) precursor followed by post-deposition annealing (up to 500 °C). Through X-ray diffraction and X-ray photoelectron spectroscopy, we demonstrate variations in film composition, stoichiometry and crystallinity with co-reactant. Depth profiling conducted with X-ray photoelectron spectroscopy reveals differences in composition between the HfOx surface and the HfOx/Si interface. We also determine differences in fixed charge density and chemical passivation through photoconductance decay measurements and Kelvin probe analysis. We find surface recombination velocities (SRVs) <10 cm s−1 are possible for HfOx films, with the best passivation achieved for H2O-based HfOx (SRVs as low as ∼5 cm s−1). With TDMAH as a hafnium precursor, we show that neither co-reactant choice nor annealing environment influence the resulting charge polarity

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch
Anmerkungen
RSC applied interfaces. - 1, 3 (2024) , 471-482, ISSN: 2755-3701

Ereignis
Veröffentlichung
(wo)
Freiburg
(wer)
Universität
(wann)
2024
Urheber
Pain, Sophie L.
Khorani, Edris
Yadav, Anup
Niewelt, Tim
Leimenstoll, Antonio
Healy, Brendan F. M.
Walker, Marc
Walker, David Johannes
Grant, Nicholas Ewen
Murphy, John D.

DOI
10.1039/d3lf00210a
URN
urn:nbn:de:bsz:25-freidok-2459915
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
25.03.2025, 13:42 MEZ

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