Hochschulschrift
Effective passivation of black silicon surfaces by conformal thermal ALD deposited Al2O3 layers
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
-
Englisch
- Notes
-
Halle (Saale), Universitäts- und Landesbibliothek Sachsen-Anhalt, Diss., 2015
- Classification
-
Physik
- Event
-
Veröffentlichung
- (where)
-
Halle, Saale
- (who)
-
Universitäts- und Landesbibliothek Sachsen-Anhalt
- (when)
-
2015
- Creator
-
Otto, Martin
- Contributor
-
Wehrspohn, Ralf B.
Scheer, Roland
Knez, Mato
- URN
-
urn:nbn:de:gbv:3:4-14656
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:55 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Otto, Martin
- Wehrspohn, Ralf B.
- Scheer, Roland
- Knez, Mato
- Universitäts- und Landesbibliothek Sachsen-Anhalt
Time of origin
- 2015
Other Objects (12)
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Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells
Al2O3 rear surface passivation for silicon ribbon solar cells
Light induced curing (LIC) of passivation layers deposited on native silicon oxide
Passivation of Si wafers by Al2O3 films with different surface conditioning
Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells
Ion-implanted PERC solar cells with Al2O3/SiN x rear passivation
Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers
ALA.-ALD.
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells
Thermal stability of thick α- and γ-Al2O3 coatings deposited by high-speed PVD
Formation of low- and high-spatial frequency laser-induced periodic surface structures (LIPSSs) in ALD-deposited MoS2
Improved silicon surface passivation by ALD Al2O3/SiO2 multilayers with In‐Situ plasma treatments
Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells
Al2O3 rear surface passivation for silicon ribbon solar cells
Light induced curing (LIC) of passivation layers deposited on native silicon oxide
Passivation of Si wafers by Al2O3 films with different surface conditioning
Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells
Ion-implanted PERC solar cells with Al2O3/SiN x rear passivation
Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers
ALA.-ALD.
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells
Thermal stability of thick α- and γ-Al2O3 coatings deposited by high-speed PVD
Formation of low- and high-spatial frequency laser-induced periodic surface structures (LIPSSs) in ALD-deposited MoS2
Improved silicon surface passivation by ALD Al2O3/SiO2 multilayers with In‐Situ plasma treatments
Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si solar cells
Al2O3 rear surface passivation for silicon ribbon solar cells
Light induced curing (LIC) of passivation layers deposited on native silicon oxide
Passivation of Si wafers by Al2O3 films with different surface conditioning
Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells
Ion-implanted PERC solar cells with Al2O3/SiN x rear passivation
Effective passivation of crystalline silicon surfaces by ultrathin atomic-layer-deposited TiOx layers
ALA.-ALD.
High-rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells
Thermal stability of thick α- and γ-Al2O3 coatings deposited by high-speed PVD