Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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In: Werner, F.; Cosceev, A.; Schmidt, J.: Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells. In: Energy Procedia 27 (2012), S. 319-324. DOI: https://doi.org/10.1016/j.egypro.2012.07.070
- Ereignis
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Veröffentlichung
- (wo)
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Hannover, Hannover
- (wer)
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Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
- (wann)
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2012
- Urheber
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Werner, Florian
Cosceev, A.
Schmidt, Jan
- DOI
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10.15488/1368
- URN
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urn:nbn:de:101:1-2020071506181879733201
- Rechteinformation
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:43 MEZ
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Beteiligte
- Werner, Florian
- Cosceev, A.
- Schmidt, Jan
- Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
Entstanden
- 2012
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Passivation of Si wafers by Al2O3 films with different surface conditioning
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