Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Werner, F.; Cosceev, A.; Schmidt, J.: Silicon surface passivation by Al2O3: Recombination parameters and inversion layer solar cells. In: Energy Procedia 27 (2012), S. 319-324. DOI: https://doi.org/10.1016/j.egypro.2012.07.070
- Event
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Veröffentlichung
- (where)
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Hannover, Hannover
- (who)
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Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
- (when)
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2012
- Creator
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Werner, Florian
Cosceev, A.
Schmidt, Jan
- DOI
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10.15488/1368
- URN
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urn:nbn:de:101:1-2020071506181879733201
- Rights
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Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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25.03.2025, 1:43 PM CET
Data provider
This object is provided by:
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Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Werner, Florian
- Cosceev, A.
- Schmidt, Jan
- Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
Time of origin
- 2012
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Electronic characteristics of ultra‐thin passivation layers for silicon photovoltaics
Al2O3 rear surface passivation for silicon ribbon solar cells
Effective passivation of black silicon surfaces by conformal thermal ALD deposited Al2O3 layers
Improved silicon surface passivation by ALD Al2O3/SiO2 multilayers with In‐Situ plasma treatments
Surface passivation study on gettered multicrystalline silicon
Surface passivation of crystalline silicon solar cells by amorphous silicon films
Passivation of Si wafers by Al2O3 films with different surface conditioning
Improved parameterization of Auger recombination in silicon
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Crystalline silicon solar cells : advanced surface passivation and analysis
Silicon interface passivation studied by modulated surface photovoltage spectroscopy
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