Improved silicon surface passivation by ALD Al2O3/SiO2 multilayers with In‐Situ plasma treatments
Abstract: Al2O3 is one of the most effective dielectric surface passivation layers for silicon solar cells, but recent studies indicate that there is still room for improvement. Instead of a single layer, multilayers of only a few nanometers thickness offer the possibility to tailor material properties on a nanometer scale. In this study, the effect of various plasma treatments performed at different stages during the ALD deposition of Al2O3/SiO2 multilayers on the silicon surface passivation quality is evaluated. Significant improvements in surface passivation quality for some plasma treatments are observed, particularly for single Al2O3/SiO2 bilayers treated with a H2 plasma after SiO2 deposition. This treatment resulted in a surface recombination parameter J0 as low as 0.35 fA cm−2 on (100) surfaces of 10 Ω cm n-type silicon, more than a factor of 5 lower than that of Al2O3 single layers without plasma treatment. Capacitance-voltage measurements indicate that the improved surface passivation of the plasma-treated samples results from an enhanced chemical interface passivation rather than an improved field effect. In addition, a superior temperature stability of the surface passivation quality is found for various plasma-treated multilayers
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Notes
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Advanced materials interfaces. - 10, 16 (2023) , 2202469, ISSN: 2196-7350
- Event
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Veröffentlichung
- (where)
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Freiburg
- (who)
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Universität
- (when)
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2023
- Creator
- DOI
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10.1002/admi.202202469
- URN
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urn:nbn:de:bsz:25-freidok-2377772
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:45 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Richter, Armin
- Patel, Hemangi
- Reichel, Christian
- Benick, Jan
- Glunz, Stefan
- Universität
Time of origin
- 2023
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