Hochschulschrift
GaN-based HEMTs for High Voltage Operation : design, technology and characterization
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783954040940
- Dimensions
-
21 cm
- Extent
-
XXI, 177, XI S.
- Edition
-
1. Aufl.
- Language
-
Englisch
- Notes
-
Ill., graph. Darst.
Zugl.: Berlin, Techn. Univ., Diss., 2012
- Bibliographic citation
-
Innovationen mit Mikrowellen und Licht ; Bd. 22
- Classification
-
Elektrotechnik, Elektronik
- Keyword
-
HEMT
Galliumnitrid
Hochspannungsbauelement
Leistungsschalter
Spannungsfestigkeit
S-Klasse Verstärker
- Event
-
Veröffentlichung
- (where)
-
Göttingen
- (who)
-
Cuvillier
- (when)
-
2012
- Creator
-
Bahat-Treidel, Eldad
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:23 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Bahat-Treidel, Eldad
- Cuvillier
Time of origin
- 2012
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Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
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Technology of GaN-based large area CAVETs with co-integrated HEMTs
Technology and characterization of GaN-based heterostructure field effect transistors (HFETs)
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Operation Mechanism of GaN-based Transistors Elucidated by Element-Specific X-ray Nanospectroscopy
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