Hochschulschrift
A GaN-based switched-mode gate-drive unit for medium-voltage IGBTs
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783948234065
- Dimensions
-
21 cm
- Extent
-
x, 156 Seiten
- Edition
-
1. Auflage
- Language
-
Englisch
- Notes
-
Illustrationen, Diagramme
Rheinisch-Westfälische Technische Hochschule Aachen, Dissertation, 2021
- Bibliographic citation
-
E.ON Energy Research Center / E.ON Energy Research Center ; 92. Ausgabe
- Classification
-
Elektrotechnik, Elektronik
- Event
-
Veröffentlichung
- (where)
-
Aachen
- (who)
-
E.ON Energy Research Center, RWTH Aachen University
- (when)
-
2021
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:16 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Beushausen, Steffen
- E.ON Energy Research Center, RWTH Aachen University
Time of origin
- 2021
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Einfluss von Gate-Tunnelströmen auf Switched-Capacitor-Schaltungen
Influence of gate tunneling currents on switched capacitor integrators
GaN-based HEMTs for High Voltage Operation : design, technology and characterization
Processing approaches and gate dielectrics for AIGaN-, GaN-based MISHFET
A switched systems approach for voltage regulation in smart grids
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