Insights into Texture and Phase Coexistence in Polycrystalline and Polyphasic Ferroelectric HfO2 Thin Films using 4D-STEM
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Microscopy and Microanalysis, Erscheinungsjahr: 2018, Jahrgang: 24, Heft: Supplement S1: Proceedings of Microscopy & Microanalysis, Seiten: 184-185,E-ISSN: 1878-4291
- Event
-
Veröffentlichung
- (where)
-
Dresden
- (who)
-
Technische Universität Dresden
- (when)
-
2022
- Creator
-
Grimley, Everett D.
Frisone, Sam
Schenk, Tony
Park, Min Hyuk
Mikolajick, Thomas
Fancher, Chris M.
Jones, Jacob L.
Schroeder, Uwe
LeBeau, James M.
- URN
-
urn:nbn:de:bsz:14-qucosa2-787880
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:21 AM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Grimley, Everett D.
- Frisone, Sam
- Schenk, Tony
- Park, Min Hyuk
- Mikolajick, Thomas
- Fancher, Chris M.
- Jones, Jacob L.
- Schroeder, Uwe
- LeBeau, James M.
- Technische Universität Dresden
Time of origin
- 2022
Other Objects (12)
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
From Ferroelectric Material Optimization to Neuromorphic Devices
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Stabilizing Ferroelectric Properties in Zirconia Thin Films
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Hafnium oxide based ferroelectric devices for memories and beyond
Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
From Ferroelectric Material Optimization to Neuromorphic Devices
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Stabilizing Ferroelectric Properties in Zirconia Thin Films
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Hafnium oxide based ferroelectric devices for memories and beyond
Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks
Optimization of performance and reliability of HZO-based capacitors for ferroelectric memory applications
Wake‐Up Mechanisms in Ferroelectric Lanthanum‐Doped Hf 0.5 Zr 0.5 O 2 Thin Films
Feldeffektsensoren zur pH-Wert-Messung und als Transducer für Biosensoren
Verborgene Energielandschaften : Negative Kapazität in ferroelektrischen Schichten
From Ferroelectric Material Optimization to Neuromorphic Devices
Accumulative Polarization Reversal in Nanoscale Ferroelectric Transistors
Stabilizing Ferroelectric Properties in Zirconia Thin Films
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
Hafnium oxide based ferroelectric devices for memories and beyond
Comparative Study of Reliability of Ferroelectric and Anti-Ferroelectric Memories
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf₀.₅Zr₀.₅O₂/Al₂O₃ Capacitor Stacks