Enhanced AlScN/GaN heterostructures grown with a novel precursor by metal–organic chemical vapor deposition

Abstract: Growth of AlScN high-electron-mobility transistor (HEMT) structures by metal–organic chemical vapor deposition (MOCVD) is challenging due to the low vapor pressure of the conventionally used precursor tris-cyclopentadienyl-scandium (Cp3Sc). It is shown that the electrical and structural characteristics of the AlScN/GaN heterostructure improve significantly by using bis-methylcyclopentadienyl-scandiumchloride ((MCp)2ScCl), which has a higher vapor pressure and allows for an increased molar flow and thus higher growth rate (GR). AlScN/GaN HEMT heterostructures with superior electrical characteristics deposited at different barrier growth temperatures are presented. The sheet resistance
of 172 Ω sq−1 obtained at 900 °C barrier growth temperature is among the lowest reported so far for AlScN/GaN HEMT structures. The sheet charge carrier density
is
and the electron mobility μ is 1124 cm2 Vs−1

Object Details

• Location: Deutsche Nationalbibliothek Frankfurt am Main
• Extent: Online-Ressource
• Language: Englisch
• Notes: Physica status solidi. Rapid research letters. - 17, 2 (2023) , 2200387, ISSN: 1862-6270

Contributors, Places and Time

• Event: Veröffentlichung
• (where): Freiburg
• (who): Universität
• (when): 2023
• Creator: Streicher, Isabel ; Leone, Stefano ; Kirste, Lutz ; Manz, Christian ; Straňák, Patrik ; Prescher, Mario ; Waltereit, Patrick ; Mikulla, Michael ; Quay, Rüdiger ; Ambacher, Oliver
• Contributor: Albert-Ludwigs-Universität Freiburg. Institut für Nachhaltige Technische Systeme ; Professur für Energieeffiziente Hochfrequenzelektronik

Further information

• DOI: 10.1002/pssr.202200387
• URN: urn:nbn:de:bsz:25-freidok-2335749
• Rights: Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
• Last update: 14.08.2025, 11:01 AM CEST