Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films

zu Verbundenen Objekten

Standort
Deutsche Nationalbibliothek Frankfurt am Main
Umfang
Online-Ressource
Sprache
Englisch

Erschienen in
Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films ; day:21 ; month:06 ; year:2024 ; extent:9
Advanced electronic materials ; (21.06.2024) (gesamt 9)

Urheber
Jaszewski, Samantha T.
Fields, Shelby S.
Calderon, Sebastian
Aronson, Benjamin L.
Beechem, Thomas E.
Kelley, Kyle P.
Zhang, Casey
Lenox, Megan K.
Brummel, Ian A.
Dickey, Elizabeth C.
Ihlefeld, Jon F.

DOI
10.1002/aelm.202400151
URN
urn:nbn:de:101:1-2406221420384.096770406874
Rechteinformation
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Letzte Aktualisierung
14.08.2025, 10:50 MESZ

Datenpartner

Dieses Objekt wird bereitgestellt von:
Deutsche Nationalbibliothek. Bei Fragen zum Objekt wenden Sie sich bitte an den Datenpartner.
Original beim Datenpartner anzeigen

Beteiligte

  • Jaszewski, Samantha T.
  • Fields, Shelby S.
  • Calderon, Sebastian
  • Aronson, Benjamin L.
  • Beechem, Thomas E.
  • Kelley, Kyle P.
  • Zhang, Casey
  • Lenox, Megan K.
  • Brummel, Ian A.
  • Dickey, Elizabeth C.
  • Ihlefeld, Jon F.

Ähnliche Objekte (12)

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide

Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation

Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films

Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films

Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films

Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

Zirconium and hafnium catalyzed C–C single bond hydroboration

Zirconium and hafnium catalyzed C–C single bond hydroboration

Formal nullwertige Bis (aren) Germylenkomplexe von Zirconium und Hafnium

Formal nullwertige Bis (aren) Germylenkomplexe von Zirconium und Hafnium

Verbundene Objekte