Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Phase Transformations Driving Biaxial Stress Reduction During Wake‐Up of Ferroelectric Hafnium Zirconium Oxide Thin Films ; day:21 ; month:06 ; year:2024 ; extent:9
Advanced electronic materials ; (21.06.2024) (gesamt 9)
- Creator
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Jaszewski, Samantha T.
Fields, Shelby S.
Calderon, Sebastian
Aronson, Benjamin L.
Beechem, Thomas E.
Kelley, Kyle P.
Zhang, Casey
Lenox, Megan K.
Brummel, Ian A.
Dickey, Elizabeth C.
Ihlefeld, Jon F.
- DOI
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10.1002/aelm.202400151
- URN
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urn:nbn:de:101:1-2406221420384.096770406874
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
14.08.2025, 10:50 AM CEST
Data provider
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Associated
- Jaszewski, Samantha T.
- Fields, Shelby S.
- Calderon, Sebastian
- Aronson, Benjamin L.
- Beechem, Thomas E.
- Kelley, Kyle P.
- Zhang, Casey
- Lenox, Megan K.
- Brummel, Ian A.
- Dickey, Elizabeth C.
- Ihlefeld, Jon F.
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Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide
On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films
Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
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Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
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Nonvolatile optical phase shift in ferroelectric hafnium zirconium oxide
On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide
Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films
Back‐End‐of‐Line Compatible Low‐Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation
Asymmetric Electrode Work Function Customization via Top Electrode Replacement in Ferroelectric and Field‐Induced Ferroelectric Hafnium Zirconium Oxide Thin Films
Impact of Pt grain size on ferroelectric properties of zirconium hafnium oxide by chemical solution deposition
Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
Impact of Ferroelectric Layer Thickness on Reliability of Back‐End‐of‐Line‐Compatible Hafnium Zirconium Oxide Films
Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
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