Surface and electrical properties of GaN layers : impact on GaN/AlInN FETs

to connected objects

Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Englisch

Notes: Magdeburg, Otto-von-Guericke-Universität Magdeburg, Dissertation, 2019

Keyword: Impact

Event: Veröffentlichung

(where): Magdeburg

(who): Universitätsbibliothek Otto-von-Guericke-Universität

(when): 2019

Creator: Fariza, Aqdas

Contributor: Dadgar, Armin

DOI: 10.25673/13749

URN: urn:nbn:de:gbv:ma9:1-1981185920-138486

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 13.09.2027, 4:49 PM CEST

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Associated

Fariza, Aqdas
Dadgar, Armin
Universitätsbibliothek Otto-von-Guericke-Universität

Time of origin

2019

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Plasma enhanced growth of GaN single crystalline layers from vapour phase

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Plasma enhanced growth of GaN single crystalline layers from vapour phase

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Structure, electronic properties, and interactions of defects in epitaxial GaN layers

Modulation of Electrical Conductivity and Lattice Distortions in Burolk HVPE-Gwn GaN

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

GaN active rectifier diode

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Cubic AlGaN, GaN structures for device application

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Electronic processes at the GaN surface

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Hochschulschrift

Spin injection in MnGa/ GaN heterostructures

Hochschulschrift

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Hochschulschrift

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Hochschulschrift

Structure, electronic properties, and interactions of defects in epitaxial GaN layers

Modulation of Electrical Conductivity and Lattice Distortions in Burolk HVPE-Gwn GaN

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

GaN active rectifier diode

Hochschulschrift

GaN nanowires on diamond

Hochschulschrift

Cubic AlGaN, GaN structures for device application

Hochschulschrift

Cubic AlGaN, GaN structures for device application

Hochschulschrift

Electronic processes at the GaN surface

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Hochschulschrift

Spin injection in MnGa/ GaN heterostructures

Hochschulschrift

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Hochschulschrift

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Hochschulschrift

Structure, electronic properties, and interactions of defects in epitaxial GaN layers

Modulation of Electrical Conductivity and Lattice Distortions in Burolk HVPE-Gwn GaN

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

GaN active rectifier diode

Hochschulschrift

GaN nanowires on diamond

Hochschulschrift

Cubic AlGaN, GaN structures for device application

Hochschulschrift

Cubic AlGaN, GaN structures for device application

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Surface and electrical properties of GaN layers : impact on GaN/AlInN FETs

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Time of origin

Other Objects (12)

Electronic processes at the GaN surface

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Spin injection in MnGa/ GaN heterostructures

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Structure, electronic properties, and interactions of defects in epitaxial GaN layers

Modulation of Electrical Conductivity and Lattice Distortions in Burolk HVPE-Gwn GaN

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

GaN active rectifier diode

GaN nanowires on diamond

Cubic AlGaN, GaN structures for device application

Cubic AlGaN, GaN structures for device application

Electronic processes at the GaN surface

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Spin injection in MnGa/ GaN heterostructures

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Structure, electronic properties, and interactions of defects in epitaxial GaN layers

Modulation of Electrical Conductivity and Lattice Distortions in Burolk HVPE-Gwn GaN

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

GaN active rectifier diode

GaN nanowires on diamond

Cubic AlGaN, GaN structures for device application

Cubic AlGaN, GaN structures for device application

Electronic processes at the GaN surface

Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE

Spin injection in MnGa/ GaN heterostructures

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Plasma enhanced growth of GaN single crystalline layers from vapour phase

Structure, electronic properties, and interactions of defects in epitaxial GaN layers

Modulation of Electrical Conductivity and Lattice Distortions in Burolk HVPE-Gwn GaN

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

GaN active rectifier diode

GaN nanowires on diamond

Cubic AlGaN, GaN structures for device application

Cubic AlGaN, GaN structures for device application

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