Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN

Location
Deutsche Nationalbibliothek Frankfurt am Main
ISSN
1556-276X
Extent
Online-Ressource
Language
Englisch
Notes
online resource.

Bibliographic citation
Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN ; volume:13 ; number:1 ; day:10 ; month:8 ; year:2018 ; pages:1-11 ; date:12.2018
Nanoscale research letters ; 13, Heft 1 (10.8.2018), 1-11, 12.2018

Creator
Kim, Hogyoung
Contributor
Yoon, Hee Ju
Choi, Byung Joon
SpringerLink (Online service)

DOI
10.1186/s11671-018-2645-8
URN
urn:nbn:de:101:1-2018100923461699231955
Rights
Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:20 AM CEST

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Associated

  • Kim, Hogyoung
  • Yoon, Hee Ju
  • Choi, Byung Joon
  • SpringerLink (Online service)

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