Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISSN
-
1556-276X
- Extent
-
Online-Ressource
- Language
-
Englisch
- Notes
-
online resource.
- Bibliographic citation
-
Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN ; volume:13 ; number:1 ; day:10 ; month:8 ; year:2018 ; pages:1-11 ; date:12.2018
Nanoscale research letters ; 13, Heft 1 (10.8.2018), 1-11, 12.2018
- Creator
-
Kim, Hogyoung
- Contributor
-
Yoon, Hee Ju
Choi, Byung Joon
SpringerLink (Online service)
- DOI
-
10.1186/s11671-018-2645-8
- URN
-
urn:nbn:de:101:1-2018100923461699231955
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
15.08.2025, 7:20 AM CEST
Data provider
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kim, Hogyoung
- Yoon, Hee Ju
- Choi, Byung Joon
- SpringerLink (Online service)