Impact of crystalline defects in 4H-SiC epitaxial layers on the electrical characteristics and blocking capability of SiC power devices
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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In: Materials Research Express 9.12 (2022): 125901.
- Event
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Veröffentlichung
- (where)
-
Erlangen
- (who)
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Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
- (when)
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2022
- Creator
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Kodolitsch, E.
Sodan, V.
Krieger, M.
Weber, Heiko B.
Tsavdaris, N.
- DOI
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10.1088/2053-1591/acaa1f
- URN
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urn:nbn:de:bvb:29-opus4-212875
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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25.03.2025, 1:41 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Kodolitsch, E.
- Sodan, V.
- Krieger, M.
- Weber, Heiko B.
- Tsavdaris, N.
- Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)
Time of origin
- 2022
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Dotierung von 4H-SiC durch Ionenimplantation
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Numerische Simulation und Analyse bipolarer 4H-SiC Leistungsbauelemente
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