Hochschulschrift
Epitaxial growth of Si and 3C-SiC by chemical vapor deposition
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Dimensions
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30 cm
- Extent
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VII, 96 Bl.
- Language
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Englisch
- Notes
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Ill., graph. Darst.
München, Techn. Univ., Diss., 2002 (Nicht für den Austausch)
- Keyword
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Silicium
Kristallfläche
Siliciumcarbid
CVD-Verfahren
- Creator
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:25 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
Other Objects (12)
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Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
Germaniumeinbau in der 3C-SiC/Si Heteroepitaxie
Aria: "Un vapor mi si solleva"
The development of 3C-SiC interlayers for diamond deposition on cemented carbide cutting tools
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Modeling for Chemical Vapor Deposition
Simulation of a Chemical Vapor Deposition
Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates
Cubic GaN on Pre-Patterned 3C-SiC/Si (001) Substrates
Darstellung und Charakterisierung epitaktischer 3C-SiC-Schichten auf Si(100)-Substraten
Epitaxial growth of Si and 3C-SiC by chemical vapor deposition
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
Germaniumeinbau in der 3C-SiC/Si Heteroepitaxie
Aria: "Un vapor mi si solleva"
The development of 3C-SiC interlayers for diamond deposition on cemented carbide cutting tools
Modeling for Chemical Vapor Deposition
Modeling for Chemical Vapor Deposition
Simulation of a Chemical Vapor Deposition
Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates
Cubic GaN on Pre-Patterned 3C-SiC/Si (001) Substrates
Darstellung und Charakterisierung epitaktischer 3C-SiC-Schichten auf Si(100)-Substraten
Epitaxial growth of Si and 3C-SiC by chemical vapor deposition
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth
Germaniumeinbau in der 3C-SiC/Si Heteroepitaxie
Aria: "Un vapor mi si solleva"
The development of 3C-SiC interlayers for diamond deposition on cemented carbide cutting tools
Modeling for Chemical Vapor Deposition
Modeling for Chemical Vapor Deposition
Simulation of a Chemical Vapor Deposition
Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates
Cubic GaN on Pre-Patterned 3C-SiC/Si (001) Substrates