Germaniumeinbau in der 3C-SiC/Si Heteroepitaxie

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Location: Deutsche Nationalbibliothek Frankfurt am Main

Extent: Online-Ressource

Language: Deutsch

Notes: Erlangen, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Dissertation, 2018

Classification: Physik

Keyword: Siliciumcarbid
Heteroepitaxie
Halbleiter
Substrat
Wide-gap-Halbleiter
Epitaxie
Siliziumkarbid
Heteroepitaxie
Materialwissenschaft
Werkstoffwissenschaften
Wide-gap-Halbleiter
Verbindungshalbleiter
Halbleiter

Event: Veröffentlichung

(where): Erlangen

(who): Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

(when): 2018

Creator: Wilhelm, Martin

Contributor: Wellmann, Peter
Wellmann, Peter

URN: urn:nbn:de:bvb:29-opus4-98847

Rights: Der Zugriff auf das Objekt ist unbeschränkt möglich.

Last update: 25.03.2025, 1:45 PM CET

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Associated

Wilhelm, Martin
Wellmann, Peter
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU)

Time of origin

2018

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Germaniumeinbau in der 3C-SiC/Si Heteroepitaxie

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Other Objects (12)

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates

Epitaxial growth of Si and 3C-SiC by chemical vapor deposition

Cubic GaN on Pre-Patterned 3C-SiC/Si (001) Substrates

Darstellung und Charakterisierung epitaktischer 3C-SiC-Schichten auf Si(100)-Substraten

Epitaxial growth of Si and 3C-SiC by chemical vapor deposition

Interface-phenomena in 3C-SiC heteroepitaxy on silicon

Herstellung von polykristallinen SiC-Quellenmaterialien und ihre Anwendung bei der Sublimationsepitaxie von einkristallinem 3C-SiC

Chemoheteroepitaxy of 3C-SiC(111) on Si(111): influence of predeposited Ge on structure and composition

Doping by nitrogen implantation and characterization of heteroepitaxial 3C-SiC thin films on Si and SOI substrates

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates

Epitaxial growth of Si and 3C-SiC by chemical vapor deposition

Cubic GaN on Pre-Patterned 3C-SiC/Si (001) Substrates

Darstellung und Charakterisierung epitaktischer 3C-SiC-Schichten auf Si(100)-Substraten

Epitaxial growth of Si and 3C-SiC by chemical vapor deposition

Interface-phenomena in 3C-SiC heteroepitaxy on silicon

Herstellung von polykristallinen SiC-Quellenmaterialien und ihre Anwendung bei der Sublimationsepitaxie von einkristallinem 3C-SiC

Chemoheteroepitaxy of 3C-SiC(111) on Si(111): influence of predeposited Ge on structure and composition

Doping by nitrogen implantation and characterization of heteroepitaxial 3C-SiC thin films on Si and SOI substrates

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates

Epitaxial growth of Si and 3C-SiC by chemical vapor deposition

Cubic GaN on Pre-Patterned 3C-SiC/Si (001) Substrates

Darstellung und Charakterisierung epitaktischer 3C-SiC-Schichten auf Si(100)-Substraten

Epitaxial growth of Si and 3C-SiC by chemical vapor deposition

Interface-phenomena in 3C-SiC heteroepitaxy on silicon

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Chemoheteroepitaxy of 3C-SiC(111) on Si(111): influence of predeposited Ge on structure and composition

Doping by nitrogen implantation and characterization of heteroepitaxial 3C-SiC thin films on Si and SOI substrates

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

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