Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Abstract: Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering the matrix a silicon oxynitride. Alternatively, SiH4 and O2 can be used, which allows for completely N-free silicon oxide. In this work, we investigate the properties of B- and P-incorporating Si NCs embedded in pure silicon oxide compared to silicon oxynitride by atom probe tomography (APT), low-temperature photoluminescence (PL), transient transmission (TT), and current–voltage (I–V) measurements. The results clearly show that no free carriers, neither from P- nor from B-doping, exist in the Si NCs, although in some configurations charge carriers can be generated by electric field ionization. The absence of free carriers in Si NCs ≤5 nm in diameter despite the presence of P- or B-atoms has severe implications for future applications of conventional impurity doping of Si in sub-10 nm technology nodes

Location
Deutsche Nationalbibliothek Frankfurt am Main
Extent
Online-Ressource
Language
Englisch
Notes
Beilstein Journal of Nanotechnology. - 9 (2018) , 1501-1511, ISSN: 2190-4286

Keyword
Atomsonde
Doping
Photolumineszenz

Event
Veröffentlichung
(where)
Freiburg
(who)
Universität
(when)
2020
Creator
Hiller, Daniel
Lopéz-Vidrier, Julian
Nomoto, Keita
Wahl, Michael
Bock, Wolfgang
Chlouba, Tomáš
Trojánek, František
Gutsch, Sebastian
Zacharias, Margit
König, Dirk
Malý, Petr
Kopnarski, Michael
Contributor

DOI
10.3762/bjnano.9.141
URN
urn:nbn:de:bsz:25-freidok-1522721
Rights
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
Last update
15.08.2025, 7:21 AM CEST

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Associated

Time of origin

  • 2020

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