Low-temperature photoluminescence investigation of light-induced degradation in boron-doped CZ silicon
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
-
Online-Ressource, 9 Seiten
- Sprache
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Englisch
- Erschienen in
-
In: Physica status solidi(219), H. 17 - ISSN 1521-396X
In: 19. Gettering and Defect Engineering in Semiconductor Technology (GADEST) (Mondsee, 10.-16.09.2022)
In: Wiley-VCH, Weinheim
- Ereignis
-
Veröffentlichung
- (wo)
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Ilmenau
- (wer)
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TU Ilmenau
- (wann)
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2022
- Urheber
- DOI
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10.1002/pssa.202200180
- URN
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urn:nbn:de:101:1-2023121802063483080765
- Rechteinformation
-
Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
15.08.2025, 07:25 MESZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Peh, Katharina
- Lauer, Kevin
- Flötotto, Aaron
- Schulze, Dirk
- Krischok, Stefan
- TU Ilmenau
Entstanden
- 2022
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