Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon ; day:30 ; month:07 ; year:2022 ; extent:9
Physica status solidi / A. A, Applications and materials science ; (30.07.2022) (gesamt 9)
- Urheber
- DOI
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10.1002/pssa.202200180
- URN
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urn:nbn:de:101:1-2022073015083020197675
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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15.08.2025, 07:26 MESZ
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Beteiligte
- Peh, Katharina
- Lauer, Kevin
- Flötotto, Aaron
- Schulze, Dirk
- Krischok, Stefan
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