- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
-
Englisch
- Erschienen in
-
In: Voronkov, V.V.; Falster, R.; Batunina, A.V.; MacDonald, D.; Bothe, K. et al.: Lifetime degradation mechanism in boron-doped Czochralski silicon. In: Energy Procedia 3 (2011), S. 46-50. DOI: https://doi.org/10.1016/j.egypro.2011.01.008
- Ereignis
-
Veröffentlichung
- (wo)
-
Hannover, Hannover
- (wer)
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Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
- (wann)
-
2011
- Urheber
-
Voronkov, Vladimir V.
Falster, Robert
Batunina, A.V.
MacDonald, D.
Bothe, Karsten
Schmidt, J.
- DOI
-
10.15488/4048
- URN
-
urn:nbn:de:101:1-2020081207303288147103
- Rechteinformation
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
-
25.03.2025, 13:50 MEZ
Datenpartner
Dieses Objekt wird bereitgestellt von:
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Beteiligte
- Voronkov, Vladimir V.
- Falster, Robert
- Batunina, A.V.
- MacDonald, D.
- Bothe, Karsten
- Schmidt, J.
- Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
Entstanden
- 2011
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