- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- Extent
-
Online-Ressource
- Language
-
Englisch
- Bibliographic citation
-
In: Voronkov, V.V.; Falster, R.; Batunina, A.V.; MacDonald, D.; Bothe, K. et al.: Lifetime degradation mechanism in boron-doped Czochralski silicon. In: Energy Procedia 3 (2011), S. 46-50. DOI: https://doi.org/10.1016/j.egypro.2011.01.008
- Event
-
Veröffentlichung
- (where)
-
Hannover, Hannover
- (who)
-
Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
- (when)
-
2011
- Creator
-
Voronkov, Vladimir V.
Falster, Robert
Batunina, A.V.
MacDonald, D.
Bothe, Karsten
Schmidt, J.
- DOI
-
10.15488/4048
- URN
-
urn:nbn:de:101:1-2020081207303288147103
- Rights
-
Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
-
25.03.2025, 1:50 PM CET
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Associated
- Voronkov, Vladimir V.
- Falster, Robert
- Batunina, A.V.
- MacDonald, D.
- Bothe, Karsten
- Schmidt, J.
- Gottfried Wilhelm Leibniz Universität Hannover, Technische Informationsbibliothek (TIB)
Time of origin
- 2011
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Avoiding boron-oxygen related degradation in highly boron doped Cz silicon
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Assembling Boron-Doped Polyphenylenes: Part 1
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