Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures
- Location
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Deutsche Nationalbibliothek Frankfurt am Main
- Extent
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Online-Ressource
- Language
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Englisch
- Bibliographic citation
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Au‐Free Ohmic Contacts and Their Impact on Sub‐Contact Charge Carrier Concentration in AlGaN/GaN Heterostructures ; day:16 ; month:11 ; year:2021 ; extent:6
Physica status solidi / B. B, Basic solid state physics ; (16.11.2021) (gesamt 6)
- Creator
- DOI
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10.1002/pssb.202100312
- URN
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urn:nbn:de:101:1-2021111714304304858629
- Rights
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Last update
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15.08.2025, 7:26 AM CEST
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Associated
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Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures
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Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization
Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence
Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip
Spin injection in MnGa/ GaN heterostructures
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
Ohmic contacts for organic optoelectronic devices
Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
Organic modified GaAs Schottky contacts
Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Optimization of Ohmic Contacts to p-GaAs Nanowires
Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization
Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence
Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip
Spin injection in MnGa/ GaN heterostructures
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
Ohmic contacts for organic optoelectronic devices
Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts
Organic modified GaAs Schottky contacts
Au‐free ohmic contacts and their impact on sub‐contact charge carrier concentration in AlGaN/GaN heterostructures
Low Resistivity n‐type GaN Ohmic Contacts on GaN Substrates
Optimization of Ohmic Contacts to p-GaAs Nanowires
Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization
Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts
Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence
Fabrication of quantum point contacts by engraving GaAs/AlGaAs heterostructures with a diamond tip
Spin injection in MnGa/ GaN heterostructures
Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts
Ohmic contacts for organic optoelectronic devices
Temperature‐Dependent Characteristics of AlN/Al 0.5 Ga 0.5 N High Electron Mobility Transistors with Highly Degenerate n‐Type GaN Regrown Ohmic Contacts