Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence
- Standort
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Deutsche Nationalbibliothek Frankfurt am Main
- Umfang
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Online-Ressource
- Sprache
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Englisch
- Erschienen in
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Diffusion Analysis of Charge Carriers in InGaN/GaN Heterostructures by Microphotoluminescence ; day:30 ; month:03 ; year:2023 ; extent:9
Physica status solidi / B. B, Basic solid state physics ; (30.03.2023) (gesamt 9)
- Urheber
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Becht, Conny
Schwarz, Ulrich T.
Binder, Michael
Galler, Bastian
- DOI
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10.1002/pssb.202200565
- URN
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urn:nbn:de:101:1-2023033115093764466229
- Rechteinformation
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Open Access; Der Zugriff auf das Objekt ist unbeschränkt möglich.
- Letzte Aktualisierung
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14.08.2025, 10:52 MESZ
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Beteiligte
- Becht, Conny
- Schwarz, Ulrich T.
- Binder, Michael
- Galler, Bastian
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