Philipp Döring
Hat mitgewirkt an:
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Theoretical limits of the matching bandwidth and output power of AlScN-based HEMTs
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Experimental evaluation of the device design and process technology of the current aperture vertical electron transistor for power electronics applications
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Metal organic chemical vapour deposition regrown large area GaN‐on‐GaN current aperture vertical electron transistors with high current capability
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Growth and Fabrication of Quasivertical Current Aperture Vertical Electron Transistor Structures