Hochschulschrift
GaN-based high electron mobility transistors with high Al-content barriers
- Location
-
Deutsche Nationalbibliothek Frankfurt am Main
- ISBN
-
9783839613405
383961340X
- Dimensions
-
21 cm
- Extent
-
114, xxxvi Seiten
- Language
-
Englisch
- Notes
-
Illustrationen
Universität Freiburg, Dissertation, 2018
- Bibliographic citation
-
Science for systems ; Band 36
- Classification
-
Physik
Elektrotechnik, Elektronik
- Event
-
Veröffentlichung
- (where)
-
Stuttgart
- (who)
-
Fraunhofer Verlag
- (when)
-
[2018]
- Creator
-
Godejohann, Birte-Julia
- Contributor
- Table of contents
- Rights
-
Bei diesem Objekt liegt nur das Inhaltsverzeichnis digital vor. Der Zugriff darauf ist unbeschränkt möglich.
- Last update
-
11.06.2025, 2:01 PM CEST
Data provider
This object is provided by:
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Deutsche Nationalbibliothek. If you have any questions about the object, please contact the data provider.
Object type
- Hochschulschrift
Associated
- Godejohann, Birte-Julia
- Ambacher, Oliver
- Fraunhofer IAF, Freiburg
- Fraunhofer IRB-Verlag
- Fraunhofer Verlag
Time of origin
- [2018]
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